Comparison of CF4 and SF6 based plasmas for ECR etching of isotopically enriched 10boron films

Isotopically enriched 10boron films have been successfully etched in an Electron Cyclotron Resonance (ECR) etching tool using CF4 and SF6 based plasmas. Comparisons between the two are made with regard to etch rate, selectivity to the underlying Si device structure, and morphology of the 10boron pos...

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Published inNuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 606; no. 3; pp. 821 - 823
Main Authors Voss, L.F., Reinhardt, C.E., Graff, R.T., Conway, A.M., Nikolić, R.J., Deo, Nirmalendu, Cheung, Chin Li
Format Journal Article
LanguageEnglish
Published United States Elsevier B.V 21.07.2009
Subjects
Boron
BORON 10
CARBON TETRAFLUORIDE
Detector
ENGINEERING
Etch
ETCHING
FABRICATION
MORPHOLOGY
Neutron
PLASMA
Processing
SILICON
SULFUR FLUORIDES
THERMAL NEUTRONS
Plasma
Boron
Detector
Etch
Neutron
Processing
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Summary:Isotopically enriched 10boron films have been successfully etched in an Electron Cyclotron Resonance (ECR) etching tool using CF4 and SF6 based plasmas. Comparisons between the two are made with regard to etch rate, selectivity to the underlying Si device structure, and morphology of the 10boron post-etching. Our present film etching development is expected to be critical for the fabrication of next generation thermal neutron solid state detectors based on 10boron.
Bibliography:USDOE
W-7405-ENG-48
LLNL-JRNL-411210
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2009.05.020