Electrical Properties of LiNbO 3 Thin Films by RF Magnetron Sputtering and Bias Sputtering

C -axis-oriented LiNbO 3 thin films were prepared on Pt(111)/ SiO 2 /Si substrates by rf magnetron sputtering. The LiNbO 3 films grown showed pyroelectricity and piezoelectricity. The pyroelectric coefficient of the film was 71×10 -6 C/(m 2 K) , which was 86% of the value of a LiNbO 3 bulk crystal....

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 34; no. 9S; p. 5113
Main Authors Nishida, Takashi, Shimizu, Masaru, Horiuchi, Toshihisa, Tadashi Shiosaki, Tadashi Shiosaki, Kazumi Matsushige, Kazumi Matsushige
Format Journal Article
LanguageEnglish
Published 1995
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Summary:C -axis-oriented LiNbO 3 thin films were prepared on Pt(111)/ SiO 2 /Si substrates by rf magnetron sputtering. The LiNbO 3 films grown showed pyroelectricity and piezoelectricity. The pyroelectric coefficient of the film was 71×10 -6 C/(m 2 K) , which was 86% of the value of a LiNbO 3 bulk crystal. The surface acoustic wave (SAW) velocity measured was 3980m/s. In order to control the polarization, bias sputtering was applied. When bias voltage was applied to the substrates during film growth, polarization reversal was observed. From these experimental results, it was found that bias sputtering effectively controls the polarization of LiNbO 3 films.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.34.5113