Cross point arrays of 8 nm × 8 nm memristive devices fabricated with nanoimprint lithography

• Published in: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Vol. 31; no. 6; p. 6
• Main Authors: Pi, Shuang, Lin, Peng, Xia, Qiangfei
• Format: Journal Article
• Language: English
• Published: 01.11.2013
• Subjects: Hydrofluoric acid (HF); Platinum (Pt); Titanium (Ti); Titanium dioxide (TiO2)

Building arrays of memristive devices with sub-10 nm lateral dimensions is critical for high packing density, low power consumption, and better uniformity in device performance. Here, the authors demonstrate arrays of 8 × 8 nm2 cross point memristive devices using wet chemical etching and nanoimprin...