Cross point arrays of 8 nm × 8 nm memristive devices fabricated with nanoimprint lithography

Building arrays of memristive devices with sub-10 nm lateral dimensions is critical for high packing density, low power consumption, and better uniformity in device performance. Here, the authors demonstrate arrays of 8 × 8 nm2 cross point memristive devices using wet chemical etching and nanoimprin...

Full description

Saved in:
Bibliographic Details
Published inJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Vol. 31; no. 6; p. 6
Main Authors Pi, Shuang, Lin, Peng, Xia, Qiangfei
Format Journal Article
LanguageEnglish
Published 01.11.2013
Subjects
Hydrofluoric acid (HF)
Platinum (Pt)
Titanium (Ti)
Titanium dioxide (TiO2)
Online AccessGet full text

Cover

More Information
Summary:Building arrays of memristive devices with sub-10 nm lateral dimensions is critical for high packing density, low power consumption, and better uniformity in device performance. Here, the authors demonstrate arrays of 8 × 8 nm2 cross point memristive devices using wet chemical etching and nanoimprint lithography. The devices exhibited nonvolatile bipolar switching with extreme low programming current of 600 pA. The devices also exhibited fast switching speed and improved uniformity and promising endurance and data retention. This work opens the opportunities for memristive devices in the next generation ultrahigh-density data storage and low-power high-speed unconventional computing.
ISSN:2166-2746
1520-8567
2166-2754
DOI:10.1116/1.4827021