High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers

The authors present results obtained with a newly developed technology of growth of

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Bibliographic Details
Published inIEEE journal of quantum electronics Vol. 27; no. 6; pp. 1531 - 1536
Main Authors Garbuzov, D.Z., Antonishkis, N.Y., Bondarev, A.D., Gulakov, A.B., Zhigulin, S.N., Katsavets, N.I., Kochergin, A.V., Rafailov, E.V.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.06.1991
Institute of Electrical and Electronics Engineers
Subjects
Absorption
Coatings
Diode lasers
Disk recording
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optical losses
Optical recording
Optical waveguides
Optics
Physics
Semiconductor lasers; laser diodes
Solids
Temperature
Threshold current
Gallium Arsenides
Gallium Indium Arsenides phosphides Mixed
Quantum well
SCH laser
Injection laser
Semiconductor laser
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Summary:The authors present results obtained with a newly developed technology of growth of
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9197
1558-1713
DOI:10.1109/3.89973