Characteristics of bottom gate a-Si TFT array for AM-OLEDs

The authors have fabricated bottom gate amorphous silicon thin film transistor （a-Si TFT） array using five-step lithography process. The device shows a field effect mobility of 0.43 cm2/（V.s）, on/off ratio of 7.5×10^6 and threshold voltage of 0.87 V. The instability of a-Si TFT is ascribed to the de...

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Bibliographic Details
Published inJournal of Shanghai University Vol. 15; no. 4; pp. 239 - 241
Main Author 张浩 陈龙龙 石继锋 李春亚 路林 李喜峰 张建华
Format Journal Article
LanguageEnglish
Published Heidelberg Shanghai University Press 01.08.2011
Subjects
Arrays
Channels
Classical Mechanics
Diodes
Engineering
Environment
Gates
Insulators
Life Sciences
Lithography
Materials Science
Mathematical and Computational Engineering
Mechatronics
OLED
Semiconductor devices
SiNx
TFT阵列
Thin film transistors
场效应迁移率
特征
闸底板
非晶硅薄膜晶体管
amorphous silicon (a-Si)
array
transistor
stability
Online AccessGet full text
ISSN1007-6417
1863-236X
DOI10.1007/s11741-011-0728-3

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Summary:The authors have fabricated bottom gate amorphous silicon thin film transistor （a-Si TFT） array using five-step lithography process. The device shows a field effect mobility of 0.43 cm2/（V.s）, on/off ratio of 7.5×10^6 and threshold voltage of 0.87 V. The instability of a-Si TFT is ascribed to the defect state in the a-Si channel and SiNx/a-Si interface. The present a-Si TFT array with SiNs insulator could be a significant step towards the commercialization of active matrix organic lighting diode （AM-OLED） technology.
Bibliography:ZHANG Hao, CHEN Long-long, SHI Ji-feng , LI Chun-ya LU Lin , LI Xi-feng , ZHANG Jian-hua （1. School of Mechatronics Engineering and Automation, Shanghai University, Shanghai 200072, P. R. China 2. Key Laboratory of Advanced Display and System Application （Shanghai University）, Ministry of Education, Shanghai 200072, P. R. China）
The authors have fabricated bottom gate amorphous silicon thin film transistor （a-Si TFT） array using five-step lithography process. The device shows a field effect mobility of 0.43 cm2/（V.s）, on/off ratio of 7.5×10^6 and threshold voltage of 0.87 V. The instability of a-Si TFT is ascribed to the defect state in the a-Si channel and SiNx/a-Si interface. The present a-Si TFT array with SiNs insulator could be a significant step towards the commercialization of active matrix organic lighting diode （AM-OLED） technology.
morphous silicon （aoSi）, transistor, array, stability
31-1735/N
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1007-6417
1863-236X
DOI:10.1007/s11741-011-0728-3