Ion implanted X-band IMPATT/TRAPATT back-to-back diodes

High-efficiency pulsed power at X-band frequencies has been generated using back-to-back IMPATT/TRAPATT silicon devices fabricated by ion implantation. Typical peak power of 8-12 W at 20-29-percent efficiency has been consistently achieved in a coaxial cavity. The highest power level obtained to dat...

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Bibliographic Details
Published inProceedings of the IEEE Vol. 61; no. 7; pp. 1044 - 1045
Main Authors Fong, T.T., Ying, R.S., Lee, D.H.
Format Journal Article
LanguageEnglish
Published IEEE 01.01.1973
Subjects
Avalanche breakdown
Boron
Circuits
Coaxial components
Diodes
Doping profiles
Epitaxial layers
Frequency
Pulse measurements
Silicon devices
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Summary:High-efficiency pulsed power at X-band frequencies has been generated using back-to-back IMPATT/TRAPATT silicon devices fabricated by ion implantation. Typical peak power of 8-12 W at 20-29-percent efficiency has been consistently achieved in a coaxial cavity. The highest power level obtained to date was 15-W peak, 21.5-percent efficiency at 8.1 GHz.
ISSN:0018-9219
1558-2256
DOI:10.1109/PROC.1973.9198