Continuous-wave operation of GaInAsSb-GaSb type-II ridge waveguide lasers emitting at 2.8 /spl mu/m

We have realized compressively strained GaInAsSb-GaSb type-II double quantum-well lasers with an emission wavelength of 2.8 mum. Using broad area devices, an internal absorption of 9.8 cm super(-1) and an internal quantum efficiency of 0.57 is determined. For the increase of the threshold current wi...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 18; no. 13; pp. 1424 - 1426
Main Authors Rossner, K, Hummer, M, Lehnhardt, T, Muller, M, chel, A, Fischer, M, Koeth, J
Format Journal Article
LanguageEnglish
Published New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01.07.2006
Subjects
Emission
Emittance
Lasers
Quantum wells
Ridges
Threshold currents
Waveguide lasers
Wavelengths
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Summary:We have realized compressively strained GaInAsSb-GaSb type-II double quantum-well lasers with an emission wavelength of 2.8 mum. Using broad area devices, an internal absorption of 9.8 cm super(-1) and an internal quantum efficiency of 0.57 is determined. For the increase of the threshold current with temperature, a T sub(0) of 44 K is obtained. Narrow ridge waveguide lasers show continuous-wave laser operation at temperatures up to 45 degC, with room-temperature (RT) threshold current of 37 mA. At RT, the maximum optical output power per facet of an uncoated 800times7 mum super(2) ridge waveguide laser exceeds 8 mW
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ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2006.877232