Continuous-wave operation of GaInAsSb-GaSb type-II ridge waveguide lasers emitting at 2.8 /spl mu/m
We have realized compressively strained GaInAsSb-GaSb type-II double quantum-well lasers with an emission wavelength of 2.8 mum. Using broad area devices, an internal absorption of 9.8 cm super(-1) and an internal quantum efficiency of 0.57 is determined. For the increase of the threshold current wi...
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Published in | IEEE photonics technology letters Vol. 18; no. 13; pp. 1424 - 1426 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
01.07.2006
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Subjects | |
Online Access | Get full text |
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Summary: | We have realized compressively strained GaInAsSb-GaSb type-II double quantum-well lasers with an emission wavelength of 2.8 mum. Using broad area devices, an internal absorption of 9.8 cm super(-1) and an internal quantum efficiency of 0.57 is determined. For the increase of the threshold current with temperature, a T sub(0) of 44 K is obtained. Narrow ridge waveguide lasers show continuous-wave laser operation at temperatures up to 45 degC, with room-temperature (RT) threshold current of 37 mA. At RT, the maximum optical output power per facet of an uncoated 800times7 mum super(2) ridge waveguide laser exceeds 8 mW |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1041-1135 1941-0174 |
DOI: | 10.1109/LPT.2006.877232 |