Dynamic Flash Memory with fast block refresh feature using double storage gates and one select gate

• Published in: Memories - Materials, Devices, Circuits and Systems Vol. 2; p. 100007
• Main Authors: Sakui, Koji, Harada, Nozomu
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.10.2022; Elsevier
• Subjects: Capacitorless DRAM; FinFET; Floating Body; GAA; SOI; Surrounding Gate Transistor (SGT); Z-RAM; Z-RAM; GAA; FinFET; Surrounding Gate Transistor (SGT); SOI; Capacitorless DRAM; Floating Body

This paper proposes a Dynamic Flash Memory (DFM) (Sakui and Harada, 2020; 2021 [1,2]) with double storage gates and one select gate based on FinFET and Surrounding Gate Transistor (SGT) (Takato et al., 1988 [3]) architectures. Like DRAM (Dennard, 1967 [4]), refresh is required, but fast block refres...