Leakage current in 808 nm laser diodes analyzed using high hydrostatic pressure and temperature

Threshold current in 808 nm GaAsP/AlGaAs laser diode has been measured as a function of pressure (up to 1.8 GPa) and temperature (from 80 to 300 K). The results have been analyzed in order to separate leakage current from radiative current and to determine the effective barrier for leakage and its p...

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Bibliographic Details
Published inphysica status solidi (b) Vol. 250; no. 4; pp. 769 - 772
Main Authors Bercha, Artem, Ivonyak, Yurii, Klimczak, Mariusz, Dybala, Filip, Piechal, Bernard, Trzeciakowski, Witold A., Dabrowska, Elzbieta, Teodorczyk, Marian, Malag, Andrzej
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.04.2013
WILEY‐VCH Verlag
Subjects
diode lasers
hydrostatic pressure
leakage current
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Summary:Threshold current in 808 nm GaAsP/AlGaAs laser diode has been measured as a function of pressure (up to 1.8 GPa) and temperature (from 80 to 300 K). The results have been analyzed in order to separate leakage current from radiative current and to determine the effective barrier for leakage and its pressure dependence. Our data indicates that both X and L minima in the barriers and in the claddings contribute to leakage.
Bibliography:Polish Ministry of Science - No. N R02 0002 06
National Center for Research and Development (NCBiR) - No. INNOTECH-K1/IN1/32/156848/NCBR/12
ark:/67375/WNG-ZK1N0BH1-Z
istex:9C0E90F633D34F5BCCD9F5278B0BBB21ED3211D5
ArticleID:PSSB201200646
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.201200646