A drain current data capture system for metal-ferroelectric-semiconductor field-effect transistors

• Published in: Integrated ferroelectrics Vol. 32; no. 1-4; pp. 21 - 32
• Main Authors: Bailey, Mark A., Ho, Fat Duen
• Format: Journal Article
• Language: English
• Published: Taylor & Francis Group 01.01.2001
• Subjects: Characterization; Data capture; Evaluation; MFSFET; Test
• ISSN: 1058-4587; 1607-8489
• DOI: 10.1080/10584580108215674

A data capture system was developed to measure drain current as a function of gate-to-source voltage and drain-to-source voltage for Metal-Ferroelectric-Semiconductor Field-Effect Transistors (MFSFETs). Data from active hysteresis, remanent hysteresis, and retention tests were collected. The system consisted of an IBM-compatible PC equipped with an analog data acquisition system and a General Purpose Interface Bus (GPIB) controller, a voltage pulse generator, a custom MFSFET evaluation circuit, dual power supplies, and several custom software modules. Software modules were written to collect drain current data from all of the MFSFETs simultaneously, while controlling drain voltage, pulse width, and gate voltage pulse waveform sequencing remotely. System capabilities were: drain voltage from 0 to 10 volts, gate voltage from − 16 to + 16 volts, and pulse width from 1 μsec to 0.999 sec. The system allowed a high degree of flexibility and customization with regard to system inputs and facilitated completely automated testing.