Thermal stability of alumina thin films containing γ-Al2O3 phase prepared by reactive magnetron sputtering

Saved in:
Bibliographic Details
Published inApplied surface science Vol. 257; no. 3; pp. 1058 - 1062
Main Authors MUSIL, J, BLAZEK, J, ZEMAN, P, PROKSOVA, S, SASEK, M, CERSTVY, R
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier 15.11.2010
Subjects
Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Deposition by sputtering
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physical properties of thin films, nonelectronic
Physics
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Thermal stability; thermal effects
Treatment of materials and its effects on microstructure and properties
Aluminium oxide
Annealing
Inorganic compounds
Nanocrystalline material
XRD
Al
Sputtering
Thermal stability
Film growth
O
Thin films
Thickness
Magnetrons
Cathode sputtering
alumina
Alpha phase
Gamma phase
Reactive sputtering
Thermal annealing
Nanocrystal
Online AccessGet full text

Cover

More Information
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2010.07.107