Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs

Cathodoluminescence spectroscopy is used to investigate the formation of point- and extended defects in SiC power MOSFETs exposed to heavy-ions. Devices showing single event leakage current (SELC) effects are analysed and compared to pristine samples. Common luminescence peaks of defect centers loca...

Full description

Saved in:
Bibliographic Details
Published inMaterials science forum Vol. 1090; pp. 179 - 184
Main Authors Bathen, Marianne Etzelmüller, Javanainen, Arto, Martinella, Corinna, Grossner, Ulrike
Format Journal Article
LanguageEnglish
Published Trans Tech Publications Ltd 31.05.2023
Subjects
Heavy-Ions
Single Event Effects
Defects
SiC Power MOSFETs
Online AccessGet full text

Cover

More Information
Summary:Cathodoluminescence spectroscopy is used to investigate the formation of point- and extended defects in SiC power MOSFETs exposed to heavy-ions. Devices showing single event leakage current (SELC) effects are analysed and compared to pristine samples. Common luminescence peaks of defect centers localized in the thermal-SiO2 are identified, together with peaks at the characteristic wavelength of extended defects.
Bibliography:Special topic volume with invited peer-reviewed papers only
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/p-3y3lv4