A 4.6-ppm/°C High-Order Curvature Compensated Bandgap Reference for BMIC

• Published in: IEEE transactions on circuits and systems. II, Express briefs Vol. 66; no. 9; pp. 1492 - 1496
• Main Authors: Zhu, Guangqian, Yang, Yintang, Zhang, Qidong
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.09.2019; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Batteries; Bipolar transistors; Curvature; Electric potential; Energy gap; high-order curvature compensation; Integrated circuits; Low-temperature coefficient; MOSFET; MOSFETs; Photonic band gap; Resistors; Semiconductor devices; Temperature distribution; Temperature effects; Temperature sensors; Voltage; voltage reference
• ISSN: 1549-7747; 1558-3791
• DOI: 10.1109/TCSII.2018.2889808

This brief presents a high precision high-order curvature-compensated bandgap voltage reference (BGR) with a 3.11-V output voltage for battery-management integrated circuits. The proposed circuit utilizes the exponential characteristics of the base current and the resistance between bases of bipolar transistors to perform corrections. The curvature of subthreshold-operating MOSFETs is considered to further compensate for high-order temperature effects over a wide temperature range of 170 °C. Test results for the proposed BGR fabricated utilizing a standard 0.18-μm BiCMOS process demonstrate that its line regulation is approximately 0.31 mV/V in a supply voltage range of 4.2-6.0 V. with 4-bit trimming, a temperature coefficient of 4.6 ppm/°C is obtained in the range of -40 °C to 130 °C. The active area of the proposed BGR is 634 × 351 μm.