AlCu Pitting Prevention in Post Etch Cleaning

Three different cases of wet polymer removal in presence of AlCu are described: namely a) oxide passivation opening, b) vias etch and c) pad patterning. The occurrence of pitting at such levels is analyzed and linked to halogens presence. Moving from these results, a proposal to limit such kind of d...

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Bibliographic Details
Published inSolid state phenomena Vol. 282; pp. 213 - 219
Main Authors Morandi, Roberto, Ravasio, Marcello, Votta, Annamaria, Tagliabue, Giovanni, Alessandri, Mauro, Pipia, Francesco
Format Journal Article
LanguageEnglish
Published Zurich Trans Tech Publications Ltd 01.08.2018
Subjects
Halogens
Passivity
AlCu Passivation
AlCu Corrosion
AlCu Pitting
AlCu Wet Cleaning
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Summary:Three different cases of wet polymer removal in presence of AlCu are described: namely a) oxide passivation opening, b) vias etch and c) pad patterning. The occurrence of pitting at such levels is analyzed and linked to halogens presence. Moving from these results, a proposal to limit such kind of defects is given, focusing on a trimmed DIW rinsing step and on a possible AlCu passivation through a plasma ashing process.
Bibliography:Selected, peer reviewed papers from the 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (14th UCPSS 2018), September 3-5, 2018, Leuven, Belgium
ISSN:1012-0394
1662-9779
1662-9779
DOI:10.4028/www.scientific.net/SSP.282.213