Study of Defects in High Energy Ion Implanted ZnO Crystals

Positron annihilation spectroscopy (PAS) was employed for characterization of defects in the hydrothermally (HT) grown zinc oxide single crystals irradiated by high energy ions. Defects created in ZnO crystals by 2.5 MeV protons, 7.5 MeV N3+ and 167 MeV Xe26+ ions were compared. The virgin ZnO cryst...

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Bibliographic Details
Published inDiffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum Vol. 373; pp. 193 - 196
Main Authors Čížek, Jakub, Procházka, Ivan, Hruška, Petr, Havránek, Vladimír, Skuratov, Vladimir A., Anwand, Wolfgang, Strukova, Tatiana S., Melikhova, Oksana
Format Journal Article
LanguageEnglish
Published Zurich Trans Tech Publications Ltd 24.03.2017
Subjects
Zinc Oxide
Radiation Induced Defects
Ion Implantation
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Summary:Positron annihilation spectroscopy (PAS) was employed for characterization of defects in the hydrothermally (HT) grown zinc oxide single crystals irradiated by high energy ions. Defects created in ZnO crystals by 2.5 MeV protons, 7.5 MeV N3+ and 167 MeV Xe26+ ions were compared. The virgin ZnO crystals contain Zn-vacancies associated with hydrogen. Ion implantation introduced additional defects, namely Zn+O di-vacancies in crystals irradiated by protons and small vacancy clusters in samples implanted by N and Xe ions.
Bibliography:Selected, peer reviewed papers from the 17th International Conference on Positron Annihilation (ICPA-17), September 20-25, Wuhan, China
ISSN:1012-0386
1662-9507
1662-9507
DOI:10.4028/www.scientific.net/DDF.373.193