Investigation of Ni Doped Ge-Te Materials for High Temperature Phase Change Memory Applications

Ni-doped Ge-Te (Ni-GT) material was proposed and investigated for phase change random access memory (PCRAM) applications. With Ni addition, the crystallization temperature, data retention ability and crystallization speed were obviously improved. The surface roughness of crystalline Ni-GT films was...

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Bibliographic Details
Published inMaterials science forum Vol. 848; pp. 460 - 465
Main Authors Zhu, Wen Qing, Xu, Ling, Ma, Zhong Yuan, Zheng, Yong Hui, Cheng, Yan, Song, San Nian, Cao, Liang Liang, Wu, Liang Cai, Song, Zhi Tang
Format Journal Article
LanguageEnglish
Published Pfaffikon Trans Tech Publications Ltd 01.03.2016
Subjects
Thermal Stability
Surface Roughness
Phase Change Material
Crystallization Temperature
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Summary:Ni-doped Ge-Te (Ni-GT) material was proposed and investigated for phase change random access memory (PCRAM) applications. With Ni addition, the crystallization temperature, data retention ability and crystallization speed were obviously improved. The surface roughness of crystalline Ni-GT films was decreased by Ni incorporation. Moreover, temperature dependent transmission electron microscopy (TEM) was applied to investigate the phase change behavior of Ni-GT films. All the experimental results demonstrated that Ni-GT material has potential for high-speed PCRAM applications in high temperature environment.
Bibliography:Selected, peer reviewed papers from the Chinese Materials Conference 2015, July 10-14, 2015, Guiyang, China
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.848.460