On the energy distribution profile of interface states obtained by taking into account of series resistance in Al/TiO2/p-Si (MIS) structures

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Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 406; no. 4; pp. 771 - 776
Main Authors PAKMA, O, SERIN, N, SERIN, T, ALTMDAL, S
Format Journal Article
LanguageEnglish
Published Kidlington Elsevier 15.02.2011
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
Physics
Thin films and multilayers
Interfacial layer
MIS structures
Frequency dependence
Localized states
Electrical properties
Interface electron state
Aluminium
CV characteristic
Thin films
Bias voltage
Surface properties
Silicon
Barrier height
Series resistance
Sol-gel growth
Titanium oxide
IV characteristic
Sol-gel process
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ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2010.11.078