A 55-64-GHz Low-Power Small-Area LNA in 65-nm CMOS With 3.8-dB Average NF and ~12.8-dB Power Gain

• Published in: IEEE microwave and wireless components letters Vol. 29; no. 2; pp. 128 - 130
• Main Authors: Yaghoobi, Majid, Yavari, Mohammad, Kashani, Milad Haghi, Ghafoorifard, Hassan, Mirabbasi, Shahriar
• Format: Journal Article
• Language: English
• Published: IEEE 01.02.2019
• Subjects: Beamforming; CMOS; Gain; Impedance; Logic gates; low power; low-noise ampli- fier (LNA); millimeter wave (mm wave); Noise measurement; phased-array receivers; Resistors; Topology; Transistors

This letter presents a low-power small-footprint low-noise amplifier (LNA) that operates over the frequency band of 55-64 GHz. Using a resistor between bulk and substrate (ground) nodes, these two nodes are isolated. This bulk isolation technique is introduced to achieve the maximum gain of the tran...