A 110 GHz Comb Generator in a 250 nm InP HBT Technology

We report a monolithic microwave integrated-circuit (MMIC) comb generator capable of producing a repetitive narrow pulse (7.1 ps pulse duration) with sharp edges (4.2 ps falling time). The circuit was designed in a 250 nm indium phosphide (InP) heterojunction bipolar transistor (HBT) technology usin...

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Bibliographic Details
Published inIEEE microwave and wireless components letters Vol. 32; no. 6; pp. 736 - 739
Main Authors Cheron, Jerome, Williams, Dylan F., Chamberlin, Richard A., Urteaga, Miguel E., Hale, Paul D., Jones, Rob D., Feldman, Ari D.
Format Journal Article
LanguageEnglish
Published IEEE 01.06.2022
Subjects
Calibration
Comb generator
Generators
Microwave circuits
millimeter-wave
monolithic microwave integrated-circuit (MMIC)
on-wafer calibration
Oscilloscopes
Pulse measurements
Time measurement
Transmission line measurements
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Summary:We report a monolithic microwave integrated-circuit (MMIC) comb generator capable of producing a repetitive narrow pulse (7.1 ps pulse duration) with sharp edges (4.2 ps falling time). The circuit was designed in a 250 nm indium phosphide (InP) heterojunction bipolar transistor (HBT) technology using differential pairs. We characterized the output signal with a 110 GHz sampling oscilloscope and de-embedded the band-limited frequency spectrum of the pulse in the circuit reference plane. We measured a pulse duration of 7.1 ps and a peak amplitude of −0.333 V. In the frequency domain, the comb generator provided −48.7 dBm of output power at 110 GHz when the circuit is fed with a 1 GHz input signal.
ISSN:1531-1309
1558-1764
DOI:10.1109/LMWC.2022.3164511