Oxygen transport during annealing of Pb(Zr,Ti)O3 thin films in O2 gas and its effect on their conductivity
Lead zirconate titanate (PZT) thin films were deposited in a reactive argon/oxygen gas mixture by radio-frequency-magnetron sputtering. The use of a metallic target allows us to control the oxygen incorporation in the PZT thin film and also, using oxygen 18 as a tracer, to study the oxygen diffusion...
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Published in | Journal of materials research Vol. 16; no. 10; pp. 3005 - 3008 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
New York, USA
Cambridge University Press
01.10.2001
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Online Access | Get full text |
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Summary: | Lead zirconate titanate (PZT) thin films were deposited in a reactive argon/oxygen gas mixture by radio-frequency-magnetron sputtering. The use of a metallic target allows us to control the oxygen incorporation in the PZT thin film and also, using oxygen 18 as a tracer, to study the oxygen diffusion in the thin films. Electrical properties and crystallization were optimized with a 90-nm PZT thin film grown on RuO2 electrodes. These PZT films, annealed with a very modest thermal budget (550 °C) show very low leakage current densities (J = 2 × 10−8 A/cm2 at 1 V). In this article we show that a strong correlation exists between the oxygen composition in the PZT film and the leakage current density. |
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Bibliography: | istex:BFAF35A90E212DB6459A9D9ED10A2617C64C5AFF ark:/67375/6GQ-R31NG2ZB-5 PII:S0884291400066395 ArticleID:06639 ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0884-2914 2044-5326 |
DOI: | 10.1557/JMR.2001.0412 |