Power-Dependent Metasurface With Self-Induced Bandgap
A metallic ring-based, diode-integrated, low-profile, power-dependent metasurface working from 3 to 3.6 GHz is proposed in this letter. Unlike the previous study which shifts a band up and down to change the impedance of the surface, the triggering of the diodes directly transforms the structure fro...
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Published in | IEEE antennas and wireless propagation letters Vol. 21; no. 6; pp. 1115 - 1119 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.06.2022
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | A metallic ring-based, diode-integrated, low-profile, power-dependent metasurface working from 3 to 3.6 GHz is proposed in this letter. Unlike the previous study which shifts a band up and down to change the impedance of the surface, the triggering of the diodes directly transforms the structure from a surface wave supportive state to a self-induced bandgap topology if exposed to high-power radio-frequency (RF) illumination. We demonstrate the concept by conducting the electromagnetic (EM)-circuit co-simulation and measurements for a 6-by-8 unit 2-D prototype. Near-field scan experiments verify that the proposed topology works in two distinct states, the on and off states, and high-power measurements prove that the reflection varies with the incident signal power. The highest 10 dB decrement in transmission occurs at 3.3 GHz with 52 dBm illumination. This structure can be used to protect sensitive devices from large signals while otherwise supporting a communication channel for small signals. |
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ISSN: | 1536-1225 1548-5757 |
DOI: | 10.1109/LAWP.2022.3158590 |