InGaAsP/InP lasers with two reactive-ion-etched mirror facets

Reactive ion etching in chlorine, methane, argon and hydrogen was used to etch smooth vertical mirror facets on both sides of InGaAsP/InP lasers. Optical measurements and lifetests show these lasers to have the same characteristics as lasers with cleaved facets.

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 28; no. 7; pp. L1236 - L1238
Main Authors VAN GURP, G. J, JACOBS, J. M, BINSMA, J. J. M, TIEMEIJER, L. F
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 1989
Subjects
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers; laser diodes
Reactive ion etching
Mirror
Facet
Heterojunction
Indium Phosphides Arsenides phosphides Mixed
Semiconductor laser
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Summary:Reactive ion etching in chlorine, methane, argon and hydrogen was used to etch smooth vertical mirror facets on both sides of InGaAsP/InP lasers. Optical measurements and lifetests show these lasers to have the same characteristics as lasers with cleaved facets.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.28.L1236