Proposed new heterojunction device for infrared detection

A novel heterojunction diode structure is proposed in which a thin metal layer, inserted between two dissimilar semiconductors, pins the surface potential of each semiconductor with respect to a common reference level (the metal Fermi energy). The resultant structure will, in principle, permit the c...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 24; no. 8; pp. 1117 - 1119
Main Authors Spratt, J.P., Schwarz, R.F., Cheng, V.M.
Format Journal Article
LanguageEnglish
Published IEEE 01.08.1977
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Summary:A novel heterojunction diode structure is proposed in which a thin metal layer, inserted between two dissimilar semiconductors, pins the surface potential of each semiconductor with respect to a common reference level (the metal Fermi energy). The resultant structure will, in principle, permit the control of interface potential in heterojunctions.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1977.18886