High-speed avalanche photodiodes using III-V nanopillars monolithically grown on silicon

We demonstrate III-V avalanche photodiodes monolithically integrated onto silicon by CMOS-compatible growth. With bandwidth exceeding 3 GHz and gain as high as 28, nanopillar devices showcase the viability of bottom-up III-V nanomaterials for high-performance optoelectronics.

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Bibliographic Details
Published inThe 9th International Conference on Group IV Photonics (GFP) pp. 48 - 50
Main Authors Chen, R., Parekh, D., Kar Wei Ng, Chang-Hasnain, Connie
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.08.2012
Subjects
Avalanche photodiode
Avalanche photodiodes
Bandwidth
III-V on silicon
Nanoscale devices
nanostructure
Performance evaluation
Photoconductivity
Silicon
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Summary:We demonstrate III-V avalanche photodiodes monolithically integrated onto silicon by CMOS-compatible growth. With bandwidth exceeding 3 GHz and gain as high as 28, nanopillar devices showcase the viability of bottom-up III-V nanomaterials for high-performance optoelectronics.
ISBN:9781457708268
1457708264
ISSN:1949-2081
1949-209X
DOI:10.1109/GROUP4.2012.6324082