IIA-7 8.5-Picosecond ring oscillator gate delay with self-aligned gate modulation-doped n+-(Al,Ga)As/GaAs FET's

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 32; no. 11; p. 2530
Main Authors Cirillo, N.C., Abrokwah, J.K.
Format Journal Article
LanguageEnglish
Published IEEE 01.11.1985
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Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1985.22314