Low-temperature crystallization and orientation evolution of Nb-doped Pb(Zr,Ti)O3 thin films using a Pb0.8Ca0.1La0.1Ti0.975O3 seed layer

Low-temperature growth of Pb(Nb0.01Zr0.2Ti0.8)O3 (PNZT) films, as low as 450 deg C, was successfully achieved by a sol-gel route using a Pb0.8Ca0.1La0.1Ti0.975O3 (PLCT) seed layer. The influence of precursor concentration of the PLCT seed layer on the orientation and ferroelectric properties of PNZT...

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Published inScripta materialia Vol. 60; no. 4; pp. 218 - 220
Main Authors Chi, Q.G., Li, W.L., Feng, B., Liu, C.Q., Fei, W.D.
Format Journal Article
LanguageEnglish
Published 01.02.2009
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Summary:Low-temperature growth of Pb(Nb0.01Zr0.2Ti0.8)O3 (PNZT) films, as low as 450 deg C, was successfully achieved by a sol-gel route using a Pb0.8Ca0.1La0.1Ti0.975O3 (PLCT) seed layer. The influence of precursor concentration of the PLCT seed layer on the orientation and ferroelectric properties of PNZT films was investigated. With increasing concentration of the PLCT seed layer, the PNZT films clearly changed from (1 1 1)-oriented to (1 0 0)-oriented. The PNZT films showed a very square ferroelectric hysteresis loop when the concentration of the PLCT seed layer is 0.05 M.
Bibliography:ObjectType-Article-2
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ISSN:1359-6462
DOI:10.1016/j.scriptamat.2008.10.003