Minority-carrier diffusion and recombination in CdZnS/CuInSe2 solar cells

Minority-carrier diffusion has been investigated in as-grown CdZnS/CuInSe2 solar cells. Capacitance-voltage (C-V) and photoconductivity measurements are combined to determine diffusion and interface recombination processes. Diffusion lengths of about 2 μm and a small interface recombination velocity...

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Bibliographic Details
Published inJournal of applied physics Vol. 58; no. 3; pp. 1362 - 1365
Main Authors Ahrenkiel, R. K., Matson, R. J., Osterwald, C. R., Dunlavy, D. J., Kazmerski, L. L.
Format Journal Article
LanguageEnglish
Published 01.08.1985
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Summary:Minority-carrier diffusion has been investigated in as-grown CdZnS/CuInSe2 solar cells. Capacitance-voltage (C-V) and photoconductivity measurements are combined to determine diffusion and interface recombination processes. Diffusion lengths of about 2 μm and a small interface recombination velocity are determined from biased photoconductivity, biased spectral response, and photoluminescence studies. Photoluminescence studies also indicate that a much lower interface recombination velocity occurs at the CdZnS/CuInSe2 interface than that at a bare CuInSe2 surface.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0021-8979
1089-7550
DOI:10.1063/1.336108