Corrections to "Efficient High-Power Laser Diodes" [Jul/Aug 13 1501211]

There are errors in Section V-C of the above-title paper [ibid., vol. 19, no. 4, article no. 1501211, Jul./Aug. 2013]. The corrected text is given, as well as a correction for Fig. 9.

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Bibliographic Details
Published inIEEE journal of selected topics in quantum electronics Vol. 20; no. 1; p. 139
Main Authors Crump, Paul, Erbert, Gotz, Wenzel, Hans, Frevert, Carlo, Schultz, Christoph M., Hasler, Karl-Heinz, Staske, Ralf, Sumpf, Bernd, MaaBdorf, Andre, Bugge, Frank, Knigge, Steffen, Trankle, Gunther
Format Journal Article
LanguageEnglish
Published New York IEEE 01.01.2014
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Gallium arsenide
III-V semiconductors
Power conversion
Quantum well lasers
Semiconductor lasers
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Summary:There are errors in Section V-C of the above-title paper [ibid., vol. 19, no. 4, article no. 1501211, Jul./Aug. 2013]. The corrected text is given, as well as a correction for Fig. 9.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2013.2289943