A solution-processable benzothiazole-substituted formazanate zinc(II) complex designed for a robust resistive memory device
A novel mononuclear bis(formazanate)zinc complex (1) based on a redox-active 1-(benzothiazol-2-yl)-5-(2-benzoyl-4-chlorophenyl)-3-phenyl formazan ligand has been synthesized and characterized. Complex 1 was prepared by reacting one equivalent of Zn(OCOCH )·2H O with two equivalents of the correspond...
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Published in | Dalton transactions : an international journal of inorganic chemistry Vol. 53; no. 36; pp. 15338 - 15349 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
England
Royal Society of Chemistry
18.09.2024
|
Subjects | |
Online Access | Get full text |
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Summary: | A novel mononuclear bis(formazanate)zinc complex (1) based on a redox-active 1-(benzothiazol-2-yl)-5-(2-benzoyl-4-chlorophenyl)-3-phenyl formazan ligand has been synthesized and characterized. Complex 1 was prepared by reacting one equivalent of Zn(OCOCH
)·2H
O with two equivalents of the corresponding formazan derivative. X-ray crystallography was employed to ascertain the solid-state structure of compound 1, and the analysis revealed a distorted octahedral geometry for the complex where the symmetrical ligands exhibit a preference for coordinating with the zinc center in the 'open' form, generating five-membered chelate rings. Moreover, cyclic voltammetry analysis reveals that complex 1 exhibits the capacity for electrochemical reduction as well as oxidation, resulting in the formation of radical anionic (L
Zn
) and dianionic (L
Zn
) states as well as the oxidation state of 1. Additionally, the developed solution-processable complex 1 was employed as the fundamental building material for resistive switching memory applications. The [FTO/Zn
L
(1)]/Ag RRAM device demonstrates exceptional resistive memory switching properties, with a substantial
/
ratio (10
), low operational
and
(0.9 V and -0.75 V) voltages, excellent endurance stability (100 cycles), and decent retention time (more than 2000 seconds). The findings presented in this study underscore the importance of redox-active formazanate metal complexes for creating promising memory storage devices. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1477-9226 1477-9234 1477-9234 |
DOI: | 10.1039/d4dt01640h |