Double-mesa-structure vertical-to-surface transmission electro-photonic device with a vertical cavity

• Published in: Japanese Journal of Applied Physics Vol. 32; no. 1B; pp. 604 - 608
• Main Authors: KURIHARA, K, NUMAI, T, OGURA, I, KOSAKA, H, SUGIMOTO, M, KASAHARA, K
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 1993
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Microelectronic fabrication (materials and surfaces technology); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Electrooptical device; Ion implantation; Light emission; Energy conversion; Surface emitting laser
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.32.604

We report a high electronic-optical power conversion efficiency of 11.4% in the laser operation of a double-mesa-structure vertical-to-surface transmission electro-photonic device with a vertical cavity. This high conversion efficiency is due to both reduction in the device resistance and increase in light emission efficiency. To reduce electrical resistance, a double mesa structure with a highly doped region is proposed and the resistance reduction is analyzed. To increase light emission efficiency, efficient carrier confinement in the active region by a proton-implanted structure, threshold current reduction by photon recycling, and decreased light absorption by annealing after proton implantation are utilized. Electronic-optical conversion efficiency of over 10% is achieved in surface-emitting devices for the first time to the authors' knowledge.