Disturbless flash memory due to high boost efficiency on BiCS structure and optimal memory film stack for ultra high density storage device
Program and erase operation on NAND-string of Bit-Cost Scalable (BiCS) flash memory has been successfully achieved. High boost efficiency of floating pillars and ONON (block oxide/charge SiN/tunnel oxide/tunnel SiN) structure as a memory film stack improve disturbance characteristics enough to reali...
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Published in | 2008 IEEE International Electron Devices Meeting pp. 1 - 4 |
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Main Authors | , , , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.12.2008
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Abstract | Program and erase operation on NAND-string of Bit-Cost Scalable (BiCS) flash memory has been successfully achieved. High boost efficiency of floating pillars and ONON (block oxide/charge SiN/tunnel oxide/tunnel SiN) structure as a memory film stack improve disturbance characteristics enough to realize tera-bit density of three dimensional flash memory. BiCS flash memory has become a more promising candidate for ultra high density memory. |
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AbstractList | Program and erase operation on NAND-string of Bit-Cost Scalable (BiCS) flash memory has been successfully achieved. High boost efficiency of floating pillars and ONON (block oxide/charge SiN/tunnel oxide/tunnel SiN) structure as a memory film stack improve disturbance characteristics enough to realize tera-bit density of three dimensional flash memory. BiCS flash memory has become a more promising candidate for ultra high density memory. |
Author | Nagata, Y. Ishiduki, M. Katsumata, R. Kido, M. Tanaka, H. Kito, M. Nitayama, A. Komori, Y. Fukuzumi, Y. Aochi, H. |
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Snippet | Program and erase operation on NAND-string of Bit-Cost Scalable (BiCS) flash memory has been successfully achieved. High boost efficiency of floating pillars... |
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Title | Disturbless flash memory due to high boost efficiency on BiCS structure and optimal memory film stack for ultra high density storage device |
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