Disturbless flash memory due to high boost efficiency on BiCS structure and optimal memory film stack for ultra high density storage device

Program and erase operation on NAND-string of Bit-Cost Scalable (BiCS) flash memory has been successfully achieved. High boost efficiency of floating pillars and ONON (block oxide/charge SiN/tunnel oxide/tunnel SiN) structure as a memory film stack improve disturbance characteristics enough to reali...

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Bibliographic Details
Published in2008 IEEE International Electron Devices Meeting pp. 1 - 4
Main Authors Komori, Y., Kido, M., Kito, M., Katsumata, R., Fukuzumi, Y., Tanaka, H., Nagata, Y., Ishiduki, M., Aochi, H., Nitayama, A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2008
Subjects
Costs
Electronic mail
FETs
Flash memory
Information systems
Semiconductor films
Silicon compounds
Stress control
Substrates
Testing
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Summary:Program and erase operation on NAND-string of Bit-Cost Scalable (BiCS) flash memory has been successfully achieved. High boost efficiency of floating pillars and ONON (block oxide/charge SiN/tunnel oxide/tunnel SiN) structure as a memory film stack improve disturbance characteristics enough to realize tera-bit density of three dimensional flash memory. BiCS flash memory has become a more promising candidate for ultra high density memory.
ISBN:9781424423774
1424423775
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2008.4796831