A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

• Published in: 2016 IEEE International Electron Devices Meeting (IEDM) pp. 2.7.1 - 2.7.4
• Main Authors: Xie, R., Montanini, P., Akarvardar, K., Tripathi, N., Haran, B., Johnson, S., Hook, T., Hamieh, B., Corliss, D., Wang, J., Miao, X., Sporre, J., Fronheiser, J., Loubet, N., Sung, M., Sieg, S., Mochizuki, S., Prindle, C., Seo, S., Greene, A., Shearer, J., Labonte, A., Fan, S., Liebmann, L., Chao, R., Arceo, A., Chung, K., Cheon, K., Adusumilli, P., Amanapu, H. P., Bi, Z., Cha, J., Chen, H.-C, Conti, R., Galatage, R., Gluschenkov, O., Kamineni, V., Kim, K., Lee, C., Lie, F., Liu, Z., Mehta, S., Miller, E., Niimi, H., Niu, C., Park, C., Park, D., Raymond, M., Sahu, B., Sankarapandian, M., Siddiqui, S., Southwick, R., Sun, L., Surisetty, C., Tsai, S., Whang, S., Xu, P., Xu, Y., Yeh, C., Zeitzoff, P., Zhang, J., Li, J., Demarest, J., Arnold, J., Canaperi, D., Dunn, D., Felix, N., Gupta, D., Jagannathan, H., Kanakasabapathy, S., Kleemeier, W., Labelle, C., Mottura, M., Oldiges, P., Skordas, S., Standaert, T., Yamashita, T., Colburn, M., Na, M., Paruchuri, V., Lian, S., Divakaruni, R., Gow, T., Lee, S., Knorr, A., Bu, H., Khare, M.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.12.2016
• Subjects: FinFETs; Lithography; Logic gates; Silicon; Strain; Ultraviolet sources; Very large scale integration
• ISSN: 2156-017X
• DOI: 10.1109/IEDM.2016.7838334

We present a 7nm technology with the tightest contacted poly pitch (CPP) of 44/48nm and metallization pitch of 36nm ever reported in FinFET technology. To overcome optical lithography limits, Extreme Ultraviolet Lithography (EUV) has been introduced for multiple critical levels for the first time. Dual strained channels have been also implemented to enhance mobility for high performance applications.