Injection Dependence of Transient Annealing in Neutron-Irradiated Silicon Devices

• Published in: IEEE transactions on nuclear science Vol. 14; no. 6; pp. 116 - 126
• Main Authors: Gregory, B. L., Sander, H. H.
• Format: Journal Article
• Language: English
• Published: IEEE 1967
• Subjects: Annealing; Atomic measurements; Charge carrier density; Current measurement; Kinetic theory; Length measurement; Photovoltaic cells; Silicon devices; Temperature dependence; Temperature sensors
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.1967.4324783

Studies have been performed to explore accurately the injection level and temperature dependence of transient annealing in neutron-irradiated P- and N-type silicon. In P-type material, the annealing factor in the 0 to 0.1 second time interval is very sensitive to the minority carrier injection level. For example, by varying the injection level from 10-5 to 10-1 the annealing factor at 0.001 second can be reduced from 10 to approximately 2. In contrast to the P-type results, the injection dependence observed in N-type silicon is very small and, furthermore, is in the opposite sense; i.e., an increase in the injection level causes an increase in the annealing factor. However, this study shows that this seemingly different behavior can be correlated on the basis of the hole-to-electron ratios of the different material types and resistivities. Annealing measurements performed in the temperature range from 180°to 300°K reaffirm the 0.3 eV activation energy previously found in P-type silicon and establish a value of 0.17 eV for N-type silicon.