Silicon-germanium nanostructures with high germanium concentration

The impact of nucleation conditions on the quality of epitaxial layers of germanium and GeSi alloys containing a high Ge mole fraction grown on (100) silicon substrates using electron-beam epitaxy is considered. The Ge x S 1 -x /Ge superlattices are grown on a Ge y Si 1 -y ( x > y ) relaxed buffe...

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Bibliographic Details
Published inBulletin of the Russian Academy of Sciences. Physics Vol. 78; no. 1; pp. 29 - 33
Main Authors Sadofyev, Yu. G., Martovitsky, V. P., Bazalevsky, M. A.
Format Journal Article
LanguageEnglish
Published Boston Springer US 2014
Subjects
Hadrons
Heavy Ions
Nuclear Physics
Physics
Physics and Astronomy
Proceedings of the International Symposium “Nanophysics and Nanoelectronics-2013”
Epitaxial Layer
Reflection High Energy Electron Diffraction
Germanium
Antimony
Buffer Layer
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Summary:The impact of nucleation conditions on the quality of epitaxial layers of germanium and GeSi alloys containing a high Ge mole fraction grown on (100) silicon substrates using electron-beam epitaxy is considered. The Ge x S 1 -x /Ge superlattices are grown on a Ge y Si 1 -y ( x > y ) relaxed buffer layer. X-ray diffractometry, atomic force microscopy and Auger spectroscopy are the main techniques used to study the properties of the grown structures.
ISSN:1062-8738
1934-9432
DOI:10.3103/S1062873814010158