Methodology of built and verification of non-linear EEHEMT model for GaN HEMT transistor

It is considered a formalized methodology allowing to realize the extraction of the parameters of non-linear EEHEMT model for ultra-high frequency FET on a basis of measured low-signal S-parameters and voltage-current characteristics. We built a model of domestic 0.15 µm GaN HEMT transistor, operati...

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Published inRadioelectronics and communications systems Vol. 58; no. 10; pp. 435 - 443
Main Authors Kokolov, A. A., Babak, L. I.
Format Journal Article
LanguageEnglish
Published New York Allerton Press 01.10.2015
Subjects
Communications Engineering
Engineering
Networks
Reflection Factor
Power Amplifier
Drain Current
Versus Versus Versus Versus Versus
Input Capacity
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Summary:It is considered a formalized methodology allowing to realize the extraction of the parameters of non-linear EEHEMT model for ultra-high frequency FET on a basis of measured low-signal S-parameters and voltage-current characteristics. We built a model of domestic 0.15 µm GaN HEMT transistor, operating in millimeter wavelength range as an example. Correctness and accuracy of the non-linear model obtained were verified by means of measurement of the output power and load characteristics of the transistor in large-signal operation.
ISSN:0735-2727
1934-8061
DOI:10.3103/S0735272715100015