Composition Dependence of the Band Gap Energy of Dilute Bismuth and Nitride GaNxBiyAs1−y−z Alloy (0 ≤ x ≤ 0.05, 0 ≤ y ≤ 0.05)

• Published in: Journal of electronic materials Vol. 47; no. 8; pp. 4539 - 4543
• Main Authors: Zhao, Chuan-Zhen, Ren, He-Yu, Wei, Tong, Wang, Sha-Sha, Lu, Ke-Qing
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.08.2018
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Electronics and Microelectronics; Instrumentation; Materials Science; Optical and Electronic Materials; Solid State Physics; N level; band gap energy; As; GaN; dilute nitride; Bi
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-018-6317-3

The band gap evolution of dilute bismuth and nitride GaN x Bi y As 1− x − y alloy is analyzed. It is found that the location of the Г conduction band minimum (CBM) of GaN x Bi y As 1− x − y is determined by two factors. One is the influence of the Bi content on the Г CBM of GaAs. The other is the interaction and the hybridization between the N level and the Г CBM of GaBi y As 1− y . For the Г valence band maximum (VBM) of GaN x Bi y As 1− x − y , the main factor to determine its location is the interaction and the hybridization between the Bi level and the Г VBM of GaAs. According to the physical mechanism for the band gap evolution, a model is established to depict the band gap energy of GaN x Bi y As 1− x − y depending on N and Bi contents quantitatively. The results obtained using the model are consistent with the experimental data.