High-performance poly-silicon TFTs using HfO/sub 2/ gate dielectric

High-performance low-temperature poly-Si thin-film transistors (TFTs) using high-/spl kappa/ (HfO/sub 2/) gate dielectric is demonstrated for the first time. Because of the high gate capacitance density and thin equivalent-oxide thickness contributed by the high-/spl kappa/ gate dielectric, excellen...

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Published inIEEE electron device letters Vol. 27; no. 5; pp. 360 - 363
Main Authors Lin, Chia-Pin, Tsui, Bing-Yue, Yang, Ming-Jui, Huang, Ruei-Hao, Chien, Chao-Hsin
Format Journal Article
LanguageEnglish
Published IEEE 01.05.2006
Subjects
Active matrix liquid crystal displays
Capacitance
Circuits
Dielectric materials
Dielectric substrates
Hafnium dioxide
Hafnium oxide
high dielectric-constant dielectric
Liquid crystal displays
Low voltage
Thin film transistors
thin-film transistors (TFTs)
Threshold voltage
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Summary:High-performance low-temperature poly-Si thin-film transistors (TFTs) using high-/spl kappa/ (HfO/sub 2/) gate dielectric is demonstrated for the first time. Because of the high gate capacitance density and thin equivalent-oxide thickness contributed by the high-/spl kappa/ gate dielectric, excellent device performance can be achieved including high driving current, low subthreshold swing, low threshold voltage, and high ON/OFF current ratio. It should be noted that the ON-state current of high-/spl kappa/ gate-dielectric TFTs is almost five times higher than that of SiO/sub 2/ gate-dielectric TFTs. Moreover, superior threshold-voltage (V/sub th/) rolloff property is also demonstrated. All of these results suggest that high-/spl kappa/ gate dielectric is a good choice for high-performance TFTs.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2006.872832