Corrigendum to “Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy” [J. Cryst. Growth 483 (2018) 140–146]

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Bibliographic Details
Published inJournal of crystal growth Vol. 486; p. 178
Main Authors Donchev, V., Milanova, M., Asenova, I., Shtinkov, N., Alonso-Álvarez, D., Mellor, A., Karmakov, Y., Georgiev, S., Ekins-Daukes, N.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 15.03.2018
Elsevier BV
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ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2018.01.012