Reliable single-ended ultra-low power GNRFETs-based 9T SRAM cell with improved read and write operations
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Published in | Microelectronics and reliability Vol. 153; p. 115321 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
01.02.2024
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Online Access | Get full text |
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ISSN: | 0026-2714 |
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DOI: | 10.1016/j.microrel.2024.115321 |