Low threshold 1.3 μm [formula omitted] lasers grown by solid-source molecular beam epitaxy

• Published in: Journal of crystal growth Vol. 175-176; pp. 42 - 45
• Main Authors: Wamsley, C.C., Koch, M.W., Wicks, G.W.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.05.1997
• Subjects: Multiple quantum wells; Semiconductor lasers; SSMBE; SSMBE; Multiple quantum wells; Semiconductor lasers

A threshold current density of 270 A/cm2 has been measured for 2 mm long InAsPGaInAsP broad area lasers grown by solid source molecular beam epitaxy. To date, these are the lowest reported threshold current density 1.3 μm lasers by any type of MBE growth technique. An optimum growth temperature of 4...