Low threshold 1.3 μm [formula omitted] lasers grown by solid-source molecular beam epitaxy

A threshold current density of 270 A/cm2 has been measured for 2 mm long InAsPGaInAsP broad area lasers grown by solid source molecular beam epitaxy. To date, these are the lowest reported threshold current density 1.3 μm lasers by any type of MBE growth technique. An optimum growth temperature of 4...

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Bibliographic Details
Published inJournal of crystal growth Vol. 175-176; pp. 42 - 45
Main Authors Wamsley, C.C., Koch, M.W., Wicks, G.W.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.05.1997
Subjects
Multiple quantum wells
Semiconductor lasers
SSMBE
SSMBE
Multiple quantum wells
Semiconductor lasers
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Summary:A threshold current density of 270 A/cm2 has been measured for 2 mm long InAsPGaInAsP broad area lasers grown by solid source molecular beam epitaxy. To date, these are the lowest reported threshold current density 1.3 μm lasers by any type of MBE growth technique. An optimum growth temperature of 465°C was determined for InAsP by maximizing the photoluminescence intensity from a test structure modeled after the laser core, and a room-temperature photoluminescence line width of 18 meV was measured on an actual laser growth.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(96)00949-9