Effects of Sputtering Pressure on Cu3N Thin Films by Reactive Radio Frequency Magnetron Sputtering

• Published in: Advanced materials research Vol. 1105; pp. 74 - 77
• Main Authors: Zou, Tao Yu, Luo, Jin Long, Ji, Xiao Lin, Wang, Hai, Hong, Kun Quan, Yang, Hai, Ju, Hai Dong
• Format: Journal Article
• Language: English
• Published: Zurich Trans Tech Publications Ltd 20.05.2015
• Subjects: Optical Band Gap; Crystal Structure; Reactive Radio Frequency Magnetron Sputtering; Atomic Force Microscopy; Copper Nitride Thin Film

Copper nitride thin films were prepared by reactive radio frequency magnetron sputtering at different sputtering pressures with fixed nitrogen to argon ratio. The influences of sputtering pressure on the structure, optical band gap, and surface morphology of films were investigated. The results show...