Effects of Sputtering Pressure on Cu3N Thin Films by Reactive Radio Frequency Magnetron Sputtering

Copper nitride thin films were prepared by reactive radio frequency magnetron sputtering at different sputtering pressures with fixed nitrogen to argon ratio. The influences of sputtering pressure on the structure, optical band gap, and surface morphology of films were investigated. The results show...

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Bibliographic Details
Published inAdvanced materials research Vol. 1105; pp. 74 - 77
Main Authors Zou, Tao Yu, Luo, Jin Long, Ji, Xiao Lin, Wang, Hai, Hong, Kun Quan, Yang, Hai, Ju, Hai Dong
Format Journal Article
LanguageEnglish
Published Zurich Trans Tech Publications Ltd 20.05.2015
Subjects
Optical Band Gap
Crystal Structure
Reactive Radio Frequency Magnetron Sputtering
Atomic Force Microscopy
Copper Nitride Thin Film
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Summary:Copper nitride thin films were prepared by reactive radio frequency magnetron sputtering at different sputtering pressures with fixed nitrogen to argon ratio. The influences of sputtering pressure on the structure, optical band gap, and surface morphology of films were investigated. The results show that the preferential orientation of polycrystalline Cu3N thin films changes from [111] to [100] when the sputtering pressure increases. Meanwhile, the optical band gap (Eg) of Cu3N thin films increases with the sputtering pressure. The surface morphology of Cu3N thin film deposited at high sputtering pressure becomes smoother than that of Cu3N thin film deposited at low sputtering pressure.
Bibliography:Selected, peer reviewed papers from the 2015 5th International Conference on Advanced Materials Research (ICAMR 2015), January 7-8, 2015, Doha, Qatar
ISSN:1022-6680
1662-8985
1662-8985
DOI:10.4028/www.scientific.net/AMR.1105.74