In-Line Charaterization of HPSI SiC Wafers Using High Resolution Surface Photovoltage Spectroscopy (HR-SPS)

• Published in: Materials science forum Vol. 1124; pp. 91 - 96
• Main Authors: Schüler, Nadine, Clausen, Thomas, Dornich, Kay
• Format: Journal Article
• Language: English
• Published: Pfaffikon Trans Tech Publications Ltd 21.08.2024
• Subjects: Silicon carbide; Wafers; Surface Photovoltage Spectroscopy; HPSI 4H-SiC; Electro-Optical Characterization

High purity semi-insulating (HPSI) 4H-SiC wafers from different vendors have been studied by surface photovoltage spectroscopy (SPV). It is demonstrated that the surface photovoltage signal height can be used to discriminate between non-compensated and compensated material, and that the SPV signal i...