In-Line Charaterization of HPSI SiC Wafers Using High Resolution Surface Photovoltage Spectroscopy (HR-SPS)

High purity semi-insulating (HPSI) 4H-SiC wafers from different vendors have been studied by surface photovoltage spectroscopy (SPV). It is demonstrated that the surface photovoltage signal height can be used to discriminate between non-compensated and compensated material, and that the SPV signal i...

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Bibliographic Details
Published inMaterials science forum Vol. 1124; pp. 91 - 96
Main Authors Schüler, Nadine, Clausen, Thomas, Dornich, Kay
Format Journal Article
LanguageEnglish
Published Pfaffikon Trans Tech Publications Ltd 21.08.2024
Subjects
Silicon carbide
Wafers
Surface Photovoltage Spectroscopy
HPSI 4H-SiC
Electro-Optical Characterization
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Summary:High purity semi-insulating (HPSI) 4H-SiC wafers from different vendors have been studied by surface photovoltage spectroscopy (SPV). It is demonstrated that the surface photovoltage signal height can be used to discriminate between non-compensated and compensated material, and that the SPV signal is also proportional to the bulk resistivity, at least for non-compensated 4H-SiC material.
Bibliography:Special topic volume with invited peer-reviewed papers only
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/p-qatL4V