In-Line Charaterization of HPSI SiC Wafers Using High Resolution Surface Photovoltage Spectroscopy (HR-SPS)

High purity semi-insulating (HPSI) 4H-SiC wafers from different vendors have been studied by surface photovoltage spectroscopy (SPV). It is demonstrated that the surface photovoltage signal height can be used to discriminate between non-compensated and compensated material, and that the SPV signal i...

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Published inMaterials science forum Vol. 1124; pp. 91 - 96
Main Authors Schüler, Nadine, Clausen, Thomas, Dornich, Kay
Format Journal Article
LanguageEnglish
Published Pfaffikon Trans Tech Publications Ltd 21.08.2024
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Abstract High purity semi-insulating (HPSI) 4H-SiC wafers from different vendors have been studied by surface photovoltage spectroscopy (SPV). It is demonstrated that the surface photovoltage signal height can be used to discriminate between non-compensated and compensated material, and that the SPV signal is also proportional to the bulk resistivity, at least for non-compensated 4H-SiC material.
AbstractList High purity semi-insulating (HPSI) 4H-SiC wafers from different vendors have been studied by surface photovoltage spectroscopy (SPV). It is demonstrated that the surface photovoltage signal height can be used to discriminate between non-compensated and compensated material, and that the SPV signal is also proportional to the bulk resistivity, at least for non-compensated 4H-SiC material.
Author Dornich, Kay
Clausen, Thomas
Schüler, Nadine
Author_xml – givenname: Nadine
  surname: Schüler
  fullname: Schüler, Nadine
  email: schueler@freiberginstruments.com
  organization: Freiberg Instruments GmbH
– givenname: Thomas
  surname: Clausen
  fullname: Clausen, Thomas
  email: thomas.clausen@freiberginstruments.com
  organization: Freiberg Instruments GmbH
– givenname: Kay
  surname: Dornich
  fullname: Dornich, Kay
  email: dornich@freiberginstruments.com
  organization: Freiberg Instruments GmbH
BookMark eNpl0EFLwzAYBuAgCm5T8CcEvEyhmiZNmh5lqB0UHKvTY4lpsnbOpkvSwfz1Vit48PRdHt734x2D48Y0CoCLEN1ECPPbNtgJn0UvR2AUMoaDJKb4GIwQpjSgUcxOwdi5DUIk5CEbgfd5E2R1o-CsElZ4ZetP4WvTQKNhusjnMK9n8FVoZR1cubpZw7ReV3CpnNl2PzDvrBZSwUVlvNmbrRdrBfNWSW-Nk6Y9wGm6DPJFfnUGTrTYOnX-eydg9XD_PEuD7OlxPrvLAokR2geyVBxTTjkiuCSJ1FIRnEQxEpzHnCkiEsoimZShjkkZa0FZnNC3hGFNcCgxmYDLIbe1Ztcp54uN6WzTVxYkRJjxfpOoV9NByf5PZ5UuWlt_CHsoQlR8T1m0xTBlT68H6q1onFey-kv8h78A1jt2tw
Cites_doi 10.1088/1742-6596/741/1/012043
10.1088/1361-648X/abf7e2
10.1088/1742-6596/450/1/012001
ContentType Journal Article
Copyright 2024 Clausen et al.
Copyright Trans Tech Publications Ltd. 2024
Copyright_xml – notice: 2024 Clausen et al.
– notice: Copyright Trans Tech Publications Ltd. 2024
DBID AAYXX
CITATION
7SR
8BQ
8FD
JG9
DOI 10.4028/p-qatL4V
DatabaseName CrossRef
Engineered Materials Abstracts
METADEX
Technology Research Database
Materials Research Database
DatabaseTitle CrossRef
Materials Research Database
Engineered Materials Abstracts
Technology Research Database
METADEX
DatabaseTitleList
Materials Research Database
CrossRef
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EISSN 1662-9752
EndPage 96
ExternalDocumentID 10_4028_p_qatL4V
GroupedDBID 4.4
ABDNZ
ACGFS
ACIWK
AFKRA
AKQKA
ALMA_UNASSIGNED_HOLDINGS
BENPR
DKFMR
EBS
HCIFZ
KB.
RNS
RTP
YNT
YQT
~02
AAYXX
CITATION
7SR
8BQ
8FD
8FE
8FG
D1I
DB1
JG9
ID FETCH-LOGICAL-c200v-cde825858032d39cfce329470a88786e3a9564c9d1f73d7fa56795b962f321c23
ISSN 0255-5476
1662-9752
IngestDate Wed Aug 13 06:22:10 EDT 2025
Tue Jul 01 01:04:48 EDT 2025
Fri Aug 01 16:46:28 EDT 2025
IsDoiOpenAccess false
IsOpenAccess true
IsPeerReviewed true
IsScholarly true
Keywords Surface Photovoltage Spectroscopy
HPSI 4H-SiC
Electro-Optical Characterization
Language English
License https://www.scientific.net/license/TDM_Licenser.pdf
https://creativecommons.org/licenses/by/4.0
LinkModel OpenURL
MergedId FETCHMERGED-LOGICAL-c200v-cde825858032d39cfce329470a88786e3a9564c9d1f73d7fa56795b962f321c23
Notes Special topic volume with invited peer-reviewed papers only
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
OpenAccessLink https://www.scientific.net/MSF.1124.91.pdf
PQID 3102689754
PQPubID 2040939
PageCount 6
ParticipantIDs proquest_journals_3102689754
crossref_primary_10_4028_p_qatL4V
transtech_journals_10_4028_p_qatL4V
ProviderPackageCode CITATION
AAYXX
PublicationCentury 2000
PublicationDate 20240821
PublicationDateYYYYMMDD 2024-08-21
PublicationDate_xml – month: 08
  year: 2024
  text: 20240821
  day: 21
PublicationDecade 2020
PublicationPlace Pfaffikon
PublicationPlace_xml – name: Pfaffikon
PublicationTitle Materials science forum
PublicationYear 2024
Publisher Trans Tech Publications Ltd
Publisher_xml – name: Trans Tech Publications Ltd
References 5058316
5704445
5704444
References_xml – ident: 5058316
  doi: 10.1088/1742-6596/741/1/012043
– ident: 5704444
  doi: 10.1088/1361-648X/abf7e2
– ident: 5704445
  doi: 10.1088/1742-6596/450/1/012001
SSID ssj0031816
Score 2.3852537
Snippet High purity semi-insulating (HPSI) 4H-SiC wafers from different vendors have been studied by surface photovoltage spectroscopy (SPV). It is demonstrated that...
SourceID proquest
crossref
transtech
SourceType Aggregation Database
Index Database
Publisher
StartPage 91
SubjectTerms Silicon carbide
Wafers
Title In-Line Charaterization of HPSI SiC Wafers Using High Resolution Surface Photovoltage Spectroscopy (HR-SPS)
URI https://www.scientific.net/MSF.1124.91
https://www.proquest.com/docview/3102689754
Volume 1124
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV3Lb9MwGLfKOMAOaLy0woaM4ACazFrbieMjVIwOxlTRDXaLnIe1CdSUkXHYX8_32c6jFYfBJYpS14n8_fy9_D0IeZmAFhFHSrHIxjmTQkVMc66ZVbbMMw0S0qVHfz6Op6fy41l0Nhj0o5au6uxNfv3XvJL_oSo8A7piluw_ULadFB7APdAXrkBhuN6IxocLdoRaIp6ZGyy6fN0qgNPZ_HBvfjHZ-2Ys5uj60ACM6nAee_9VwDYurYGdPTuv6goYVY0RPNiSvsYil9XShQJMv7D5bN64DJruT-59WHu5SQzqyjq4c51zPIJ_NwmJhscYqt9iaPLDNJ6fXoCS8f2SL3xzqk8huid4JLhEFyvvPBJOyLqTgRXXYy9MCZkbmDIskiqUwfbMN4450ypa5c5jLnsM1rf2CqLa98JdFwJgEWNiw5L9NPWR_NoJujb8EAwfHJQuUz_kFrnNwcpANpkcfGgEOXA71zm3_VRfuxj_ud9MvqrNdCbKnRoXAcvw9rSVky1yL5gZ9K3HzH0yKBcPyGav-ORD8j2gh66hh1aWInoooId69FCHHorooR16aEAP7aOH9tFDX3nsvH5ETg_en0ymLLTeYDlssN8sL8qEgyWZjAQvhM5tXgqupRoZEEpJXAoDdrXMdTG2ShTKmihWOsp0zK3g45yLx2RjUS3KbUItFwJsbllgnaLIWDPmMEM2knBjQP0fkufNEqZLX2ElXSfQkOw0a5uG_fcrBcOExwngRQ7Ji3a9u9_XJ3lyo1FPyd0O0ztko768KndB76yzZw4dfwBIGYVi
linkProvider ProQuest
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=In-Line+Charaterization+of+HPSI+SiC+Wafers+Using+High+Resolution+Surface+Photovoltage+Spectroscopy+%28HR-SPS%29&rft.jtitle=Materials+science+forum&rft.au=Sch%C3%BCler%2C+Nadine&rft.au=Clausen%2C+Thomas&rft.au=Dornich%2C+Kay&rft.date=2024-08-21&rft.pub=Trans+Tech+Publications+Ltd&rft.issn=0255-5476&rft.eissn=1662-9752&rft.volume=1124&rft.spage=91&rft.epage=96&rft_id=info:doi/10.4028%2Fp-qatL4V&rft.externalDocID=10_4028_p_qatL4V
thumbnail_s http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=https%3A%2F%2Fwww.scientific.net%2FImage%2FTitleCover%2F7246%3Fwidth%3D600