Sm3+-substituted NiZnCd nanoferrites: synthesis, magnetic interactions, and DC electrical resistivity characteristics

The sol–gel auto-combustion method was used to prepared 5 Zn 0.4 Cd 0.1 Fe 2-x Sm x O 4 ( x  = 0.0, 0.02, 0.04, 0.06, and 0.08) doped with rare earth Sm 3+ . To adjust the structural, DC electrical resistivity, and magnetic characteristics of the spinel ferrites, rare earth Sm 3+ was doped. As a res...

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Published inJournal of materials science. Materials in electronics Vol. 35; no. 24; p. 1656
Main Authors Vagdevi, K., Sharma, M. V. N. V., Nagalakshmi, T. V., Reddy, G. Srinivas, Erfan, Sk, Babu, J. Kishore
Format Journal Article
LanguageEnglish
Published New York Springer US 01.08.2024
Springer Nature B.V
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Summary:The sol–gel auto-combustion method was used to prepared 5 Zn 0.4 Cd 0.1 Fe 2-x Sm x O 4 ( x  = 0.0, 0.02, 0.04, 0.06, and 0.08) doped with rare earth Sm 3+ . To adjust the structural, DC electrical resistivity, and magnetic characteristics of the spinel ferrites, rare earth Sm 3+ was doped. As a result, using X-ray diffraction (XRD), field effect scanning electron microscopy (FESEM), Fourier transformation infrared spectroscopy (FTIR), two-probe technique, and vibrating sample magnetometer (VSM), respectively, researchers investigated the systematic impact of Sm 3+ on the structural, morphological, DC resistivity, and magnetic studies. The synthesized materials' ability to form a single-phase nanostructure was confirmed by XRD investigation. Images captured by field effect scanning electron microscopy show that all samples exhibit spherical nanocrystalline activity. Spinel formation was verified using Fourier transform infrared spectroscopy (FTIR). NiZnCd ferrite's magnetic properties are examined to Sm 3+ doping using vivid sample magnetometry spectra. Coercivity values and saturation magnetization decrease due to the increased Sm 3+ doping. Data on saturation magnetization, coercivity, and remanence magnetization were obtained from the Sm 3+ doping of NiZnCd micro ferrites. These results suggest that the device may find use in magnetic recording and memory applications. A two-probe approach is used to measure the DC electrical resistivity, which reveals the semiconducting nature. The carrier concentration and activation energy were found using data on DC electrical resistivity and were subsequently linked to Sm 3+ replacement. The DC electrical resistivity testing of the prepared ferrite samples was conducted using a standard two-probe method.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-024-13407-5