Specific features of formation and propagation of 60° and 90° misfit dislocations in GexSi1-x/Si films with x > 0.4

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Bibliographic Details
Published inJournal of crystal growth Vol. 312; no. 21; pp. 3080 - 3084
Main Authors BOLKHOVITYANOV, Yu. B, DERYABIN, A. S, GUTAKOVSKII, A. K, SOKOLOV, L. V
Format Journal Article
LanguageRussian
English
Published Amsterdam Elsevier 15.10.2010
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ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2010.07.041